Description
Overview
KVR26S19S8/8
8GB 1Rx8 1G x 64-Bit PC4-2666
CL19 260-Pin SODIMM
This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
Features
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
Specifications
CL(IDD)
19 cycles
Row Cycle Time (tRCmin)
45.75ns(min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
350ns(min.)
Row Active Time (tRASmin)
32ns(min.)
Maximum Operating Power
TBD W*
UL Rating
94 V - 0
Operating Temperature
0oC to +85oC
Storage Temperature
-55oC to +100oC
KVR26S19S8/8
8GB 1Rx8 1G x 64-Bit PC4-2666
CL19 260-Pin SODIMM
This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
Features
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
Specifications
CL(IDD)
19 cycles
Row Cycle Time (tRCmin)
45.75ns(min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
350ns(min.)
Row Active Time (tRASmin)
32ns(min.)
Maximum Operating Power
TBD W*
UL Rating
94 V - 0
Operating Temperature
0oC to +85oC
Storage Temperature
-55oC to +100oC